龙世兵，中国科学技术大学教授。从事微纳加工、阻变存储器、超宽禁带半导体器件（功率器件及探测器件）、存储器电路设计等领域的研究。国家杰出青年科学基金获得者，IEEE高级会员。在IEEE EDL、Adv. Mater.、Nat. Commun.等国际学术期刊上发表论文100余篇，SCI他引5500余次，H因子43，6篇论文入选ESI高引论文。申请专利100余项，其中9项转移给国内最大的集成电路制造企业中芯国际，74项授权/受理发明专利许可给武汉新芯。主持国家自然科学基金、科技部（863、973、重大专项、重点研发计划）、中科院、广东省等资助科研项目20多项。参与获得国家技术发明奖二等奖、国家自然科学二等奖、中国科学院杰出科技成就奖。

• 1995.9-2002.3 北京科技大学，学士，应用物理；硕士，材料物理
• 2002.4-2005.6 中国科学院微电子研究所，博士，微电子学与固体电子学
• 2005.7-2018.3 中国科学院微电子研究所，助理研究员、副研究、研究员
• 2018.3-至今 中国科学技术大学微电子学院，教授，常务副院长、执行院长

• 2018年，中国科学院杰出科技成就奖，第3完成人
• 2016年，国家自然科学二等奖，第4完成人
• 2013年，国家技术发明二等奖，第6完成人
• 2017年，中国科学院创新交叉团队
• 2013年，国家自然科学基金优秀青年科学基金

• Zhang, Y., Mao, GQ.,  Zhao, X. *, Long, S. *, et al.  Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging. Nat Commun 12, 7232 (2021).
• X. Hou, X. Zhao*, S. Long*, et al. High-performance harsh-environment-resistant GaOX solar-blind photodetectors via defect and doping engineering, Advanced Materials 2021, 2106923.[封面文章]
• P. Tan, X. Zhao*, S. Long* et al., Balancing the transmittance and carrier-collection ability of Ag nanowire networks for high-performance self-powered Ga2O3  Schottky photodiode, Advanced Optical Materials 2021, 9, 2100173.
• C. Chen, X. Zhao*,  S. Long* et al., High-performance β-Ga2O3 solar-blind photodetector with extremely low working voltage, IEEE Electron Device Letters 2021, 42, 1492.
• Qiming He, Wenxiang Mu, Bo Fu, Zhitai Jia, Shibing Long*, Zhaoan Yu, Zhihong Yao, Wei Wang, Hang Dong, Yuan Qin, Guangzhong Jian, Ying Zhang, Huiwen Xue, Hangbing Lv, Qi Liu, Minghua Tang, Xutang Tao*, and Ming Liu*. Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics. IEEE Electron Device Letters, 2018, 39(4), 556-559.
• Yuanjie Lv, Xingye Zhou*, Shibing Long*, Xubo Song, Yuangang Wang, Shixiong Liang, Zezhao He, Tingting Han, Xin Tan, Zhihong Feng, Hang Dong, Xuanze Zhou, Yangtong Yu, Shujun Cai, Member, IEEE, Ming Liu. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2. IEEE Electron Device Letters, 2018, 39. DOI: 10.1109/LED.2018.2881274
• Qiming He, Wenxiang Mu, Hang Dong, Shibing Long*, Zhitai Jia, Hangbing Lv, Qiu Liu, Minghua Tang, Xutang Tao* and Ming Liu. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics. Applied Physics Letters, 2017, 110, 093503.
• Yu Li, Shibing Long*, Qi Liu, Hangbing Lv, and Ming Liu*. Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials. Small, 2017, 13(35), 1604306.
• Shibing Long, Xiaojuan Lian, Tianchun Ye, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices. IEEE Electron Device Letters, 2013, 34(5), 623-625.
• Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, and Jordi Suñé. A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown. IEEE Electron Device Letters, 2013, 34(8), 999-1001.