孙海定博士现任中国科大微电子学院教授，博士生导师，iGaN Laboratory实验室负责人。先后入选国家优青，省杰青，中科院海外高层次人才计划。本科和硕士毕业于华中科技大学，师从刘胜院士。博士毕业于美国波士顿大学，师从氮化物半导体分子束外延奠基人Theodore D. Moustakas教授。长期致力于宽禁带III族氮化物（GaN等）和III族氧化物（Ga2O3等）化合物半导体材料MOCVD和MBE外延、光电器件（LED, laser, photodetector等）和电力电子功率器件（高电子迁移率晶体管HEMTs）设计与制备研究。同时开展包括低维材料与器件（纳米线，量子点），二维/三维新型半导体异质结的材料生长、载流子输运特性、光电集成器件与系统研究。

学术研究：

共发表SCI论文160余篇，ESI高被引论文15+篇，Google引用6200+，包括Nature Electronics（2篇）封面论文, Nature Photonics, Nature Catalysis, Nature Communications, Advanced Materials封面, Light: Science and Application封面, Laser & Photonics Reviews, Reports on Progress in Physics, Advanced Functional Materials, ACS Nano, Nano Letters, Small, Advanced Optical Materials, Nanoscale, IEEE Electron Device Letters, Applied Physics Letters, Optics Letters and Optics Express等国际重要SCI论文和IEDM等国际电子器件顶会论文。获国内外专利授权20余项，部分技术与工业界合作已经产业化。在国际会议上做口头报告100多次（30余特邀报告），受邀撰写4本光电材料与器件专著章节。相关科研工作被国际主流科技媒体报道150余次，包括半导体行业权威杂志《Compound Semiconductor》（10余次）、《Semiconductor Today》（5次）等多次月刊封面报道。目前担任光电器件领域国际知名期刊如IEEE Photonics Technology Letters副主编等，并受邀担任Nano-Micro Letters、Material Today Electronics、半导体学报等期刊青年编委。入选中科院优秀博士论文（2篇），中科院优秀导师称号（连续3次），IEEE旗下光电子领域学生最高奖IEEE Photonics Society Graduate Student Scholarship奖学金, iCAX Young Scientist Award等国际青年科学家奖项。

创新创业方面：

2014年在波士顿创立美国太阳能公司CloudSolar，被华尔街日报，波士顿环球时报，美国国家广播电台等报道并同时担任墨西哥Solarever集团公司首席科学家。近三年培养的学生在全国创新创业竞赛方面获国家奖3项（2024挑战杯国家金奖1项，2024全国大学生创新创业国家银奖2两项）及十余项省部级一等奖等。

国际合作：

1.Prof. Boon S. Ooi from KAUST, Saudi Arabia

2.Prof. Zetian Mi from University of Michigan, Ann Abor

3.Prof. Lan Fu from The Australian National University

4.Prof. Tawfique Hasan from Universityof Cambridge

招生对象：

本科大三大四（指导大创/毕业设计），及硕士（主要招收对创新创业感兴趣或立志于将来攻读博士学位的硕士生为主）/博士/博士后。招生背景：电子，物理，材料，光电，化学等对半导体材料和器件感兴趣的同学，热烈欢迎加入我们富有激情和活力的iGaN Laboratory，一起加油GaN。

· 2004-2008 华中科技大学，学士，电子科学与技术

· 2009-2015 美国波士顿大学，博士，电子工程（导师：Dr. Theodore D. Moustakas）

· 2015-2016 墨西哥SolarEver太阳能波士顿分公司，首席科学家

· 2016-2018 沙特阿卜杜拉国王科技大学（KAUST），博士后兼Lab Manager

· 2018-2024 中国科技大学微电子学院，特任研究员/特任教授，博导

· 2025-至今 中国科技大学微电子学院，教授，博导

1，2023和2024年度中国科学院优秀导师

2，2023和2024年度中国科学院优秀博士论文指导老师

3,   2021年度 iCAX Young Scientist Award（iCAN国际青年科学家奖）

4，IEEE Photonics Society Graduate Student Scholarship（博士生获奖）

详细及最新文章请点击：https://www.researchgate.net/profile/Haiding-Sun 

光电材料与器件代表性论文：

1) Muhammad Hunain Memon, Haiding Sun* et al., A three-terminal light emitting and detecting diode, Nature Electronics 7, 279-287 (2024) (Cover Article) (封面论文和ESI高被引论文)

2) Danhao Wang, Haiding Sun* et al., Bidirectional photocurrent in p–n heterojunction nanowires. Nature Electronics, 4(9), 645-652 (2021) (ESI高被引论文)

3) Huabin Yu, Haiding Sun* et al., Dual-Functional Triangular-Shape Micro-Size Light-Emitting and Detecting Diode for On-Chip Optical Communication in the Deep Ultraviolet Band, Laser & Photonics Review, 2300789 (2024)

4) Huabin Yu, Haiding Sun* et al., Vertically Integrated Self-Monitoring AlGaN-Based Deep Ultraviolet Micro-LED Array with Photodetector Via a Transparent Sapphire Substrate Toward Stable and Compact Maskless Photolithography Application, Laser & Photonics Reviews19(2), 2401220 (2025)

5) Xin Liu, Haiding Sun* et al., Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality, Nature Communications 15 (1), 7671 (2024)

6) Haiding Sun* et al., Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate, Advanced Functional Materials, 29(48), 1905445 (2019)

7) Huabin Yu, Haiding Sun* et al., Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics, Advanced Optical Materials, 2400499 (2024)

8) Huabin Yu, Haiding Sun* et al., AlGaN-based deep ultraviolet micro-LED emitting at 275 nm Optics Letters 46(13), 3271-3274 (2021) (ESI高被引论文)

9) Shudan Xiao, Haiding Sun* et al., In-depth investigation of deep ultraviolet MicroLED geometry for enhanced performance, IEEE Electron Device Letters, 44(9), 1520-1523 (2023)

10) Tian Meng, Haiding Sun* et al., Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall. Optics Letters 46(19), 4809-4812 (2021)

11) Rui Wang, Haiding Sun* et al., Integrated Deep-Ultraviolet Micro-LED Array with Ultralow Contact Resistance and Ultrahigh Bandwidth for Intermixed Solar-Blind Optical Wireless Communication, IEEE Electron Device Letters, 45(12), 2479-2482 (2024)

12) Haochen Zhang, Haiding Sun* et al., Superior AlGaN/GaN-Based Phototransistors and Arrays with Reconfigurable Triple-Mode Functionalities Enabled by Voltage-Programmed Two-Dimensional Electron Gas for High-Quality Imaging, Advanced Materials 36 (36), 2405874 (2024)

13) Wei Chen, Haiding Sun* et al., Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication, Advanced Materials 36 (1), 2307779 (2024) 【Featured as Back Cover Article】

14) Shi Fang, Haiding Sun* et al., Light-induced bipolar photoresponse with amplified photocurrents in electrolyte-assisted bipolar p-n junction, Advanced Materials 35(28), 2300911 (2023) 【Featured as Frontpiece Article, ESI Highly Cited Paper】(ESI高被引论文)

15) Shi Fang, Haiding Sun* et al., Breaking the Responsivity-Bandwidth Trade-Off Limit in GaN Photoelectrodes for High-Response and Fast-Speed Optical Communication Application, Advanced Functional Materials 33 (37), 2214408 (2023)

16) Danhao Wang, Haiding Sun* et al., “Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires”, Light: Science & Applications, 11(1), 1-13 (2022) (封面论文和ESI高被引论文)

电力电子器件代表性论文：

1. Y. Mao, Haiding Sun*et al., Multi-Wavelength Laser-Based Transient Thermoreflectance for Channel-Temperature Monitoring of GaN HEMTs, IEEE Transactions on Power Electronics, 2025

2. H. Zhang, Haiding Sun*et al., Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network Z Xiang, IEEE Journal of Emerging and Selected Topics in Power Electronics 12 (6), 5661(2024)

3. H. Zhang, Haiding Sun*et al., 2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs, IEEE Electron Device Letters 45 (7), 1157-1160(2024)

4. Z. Huang, Haiding Sun*et al., Structural and Electrical Characteristics of GaN HEMTs With In Situ SiNx Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas IEEE Transactions on Electron Devices, 71 (8), 4590-4595 (2024)

5. H. Zhang, Haiding Sun*et al., Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers, Science China Information Science, 66 (8), 182405 (2023)

6. H. Zhang, Haiding Sun*et al., Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs, Applied Physics Letters 122 (17) (2023)

7. H. Zhang, Haiding Sun*et al., Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability, IEEE Tran. on Electron Device (2023) DOI:10.1109/TED.2023.3280863

8. Y. Sun, Haiding Sun*et al., Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs, IEEE Electron Device Letters, 43 (8), 1199-1203(2022)

9. L. Yang, Haiding Sun*et al., Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors， Applied Physics Letters， 120（9），091103(2022) (ESI高被引论文)

10. H. Zhang, Haiding Sun* et al, Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics, Reports on Progress in Physics, 84(4), 044401 (2021) (ESI高被引论文)

11. H. Zhang, Haiding Sun* et al, Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles, Applied Physics Letters, 119(7), 072104 (2021);

12. H. Zhang, Haiding Sun* et al., Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 10⁷ A/W, Applied Physics Letters 118 (24), 242105 (2021) (ESI高被引论文)