位置栏目

赵晓龙  特任教授
主要研究方向:宽禁带半导体光电探测器、新型感知器件、阻变器件
电话:
邮箱:xlzhao77@ustc.edu.cn
办公室:高新校区1号学科楼4楼,西校区电三楼807
个人简介

赵晓龙,中国科学技术大学集成电路学院/微电子学院特任教授,博士生导师,入选国家级青年人人才支持计划。具有深厚的宽禁带半导体研究基础,在氧化镓材料外延生长及掺杂调控、光电器件结构设计、机理探索、阵列集成等方面开展了长期的研究工作,并取得系列创新成果。近五年以第一/通讯作者发表论文40余篇,多项学术成果发表在Nat. Commun.、Fundam. Res.、Adv. Mater.、Adv. Funct. Mater.、IEEE EDL、Appl. Phys. Lett.、ACS Nano、Photonics、Nano Lett.等国际期刊和电子器件国际顶级会议IEEE IEDM上,其中ESI高被引论文6篇。部分代表性研究工作被评为2021 5th IEEE EDTM 国际会议最佳论文、Adv. Mater. 期刊封面及IEEE EDL期刊封面,并受到半导体行业杂志Semiconductors Today的专题报道。近五年学术引用达5000余次,H指数为43。授权中国专利10余项,美国专利1项。先后主持博新计划、博士后面上、国自然青年基金C类、安徽省面上等项目,作为任务负责人参与科技部国家重点研发计划。  

个人经历
  • 2015-2019 武汉大学与中国科学技术大学联合培养,博士

  • 2019-至今 中国科学技术大学微电子学院

论文
  • Li, C., Su, H., Hou, X., Gan, Z., Peng, Z., Wu, W., Huang, H., Li, Y., Zhou, X., Xu, G., Zhao, X., and Long, S.: ‘High-Sensitivity and Fast DUV Ga2O3 Photodetectors for Elevated Temperatures Operation via Bottom-Up Diffusion Doping’, IEEE Electron Device Letters, 2026, 47, (3), pp. 554-557

  • Zou, Y., Liu, Y., Zhao, X., Wang, Y., Xin, Y., Zhan, H., Feng, X., Yu, S., Ding, W., Fu, Z., Hou, X., and Long, S.: ‘Multispectral In-Sensor Computing for Image Recognition Based on the Opposite Photogating Photosynapse’, ACS Nano, 2025, (2025-ACS nano-multispectral-in-sensor-computing-for-image-recognition-based-on-the-opposite-photogating-photosynapse.pdf)

  • Zhong, W., Huang, H., Liu, Y., Jing, J., Wu, W., Liu, W., Zhao, X., Long, S., and Xu, H.: ‘Liquid-metal-assisted exfoliation of 2D β-Ga2O3 with high anisotropy ratio for solar-blind detection and polarization imaging’, Applied Physics Reviews, 2025, 12, (1)

  • Zhan, H., Wang, Y., Wang, Z., Zhao, X., Han, K., Feng, Z., Wu, Z., Huang, H., Zou, Y., and Yin, H.: ‘Deep Ultraviolet Photosynapse with Enhanced Reproducibility and Heat Dissipation for Integrated In-Sensor Computing’, Fundamental Research, 2025

  • Yu, S., Hou, X., Liu, Y., Zhao, X., and Long, S.: ‘High-performance β-Ga2O3 solar-blind UV/X-ray photodetector enhanced by oxygen vacancy modulation’, Science China Materials, 2025

  • Yilin Wang, W.W., Keju Han, Haoyan Zhan, Shenyi Huang, Peiwen Tong, Xiaolong Zhao, Juhong Liu, Xiao Feng, Xiaohu Hou, Hong Huang, Wei Wang, Guangwei Xu, Xuanze Zhou, Shibing Long: ‘UWBG Ga2O3/AlN DUV Phototransistors on Si Platform for In-sensor Memory and Computing based on Polarization-Induced Carrier Separation Strategy’, IEEE International Electron Devices Meeting (IEDM), 2025, pp. 1

  • Luo, L., Huang, H., Yang, L., Hao, R., Hu, X., Li, Y., Zhao, X., Zhang, Z., and Long, S.: ‘Ultra‐Fast Gallium Oxide Solar‐Blind Photodetector with Novel Thermal Pulse Treatment’, Advanced materials, 2025, 37, (12), pp. 2414130

  • Liu, Y., Hou, X., Ding, M., Xu, Z., Yu, S., Zhao, X., Xu, G., Zhou, X., and Long, S.: ‘Tunable Superlinear Gallium Oxide Gate-All-Around Deep-Ultraviolet Phototransistor for Near-Field Imaging’, ACS Nano, 2025

  • Huang, H., Yao, B., Liu, J., Han, K., Wu, Y., Yin, H., Hou, X., Wang, Z., Gao, N., Zhong, W., Liu, W., Zhao, X., and Long, S.: ‘Robust Zn:Ga2O3 DUV Photodetectors with Ultra-high Responsivity and Selectivity’, IEEE Electron Device Letters, 2025, 46, (8), pp. 1369 - 1372

  • Hou, X., Li, C., Chen, C., Bai, S., Liu, Y., Peng, Z., Zhao, X., Zhou, X., Xu, G., and Gao, N.: ‘High‐Performance Ga2O3 In‐Memory DUV Photodetectors By Interface Charge Reservoir Design for Multifunctional Applications’, Advanced materials, 2025, 37, (33), pp. 2506179

  • Zhong, W., Liu, Y., Huang, H., Sun, Z., Xin, W., Liu, W., Zhao, X., Long, S., and Xu, H.: ‘Ultrathin Ga2O3 Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation’, Nano Letters, 2024

  • Yu, S., Liu, Y., Hou, X., Ding, M., Zou, Y., Guan, Y., Wu, Z., Zhao, X., Hu, Q., and Xu, G.: ‘Stable Ga2O3 soft x-ray detector with ultrahigh responsivity’, Applied Physics Letters, 2024, 124, (18)

  • Wu, W., Huang, H., Wang, Y., Yin, H., Han, K., Zhao, X., Feng, X., Zeng, Y., Zou, Y., Hou, X., Wei, Z., and Long, S.: ‘Structure engineering of Ga2O3 photodetectors: a review’, Journal of Physics D: Applied Physics, 2024, 58, (6), pp. 063003

  • Wang, Z., Han, K., Huang, H., Zhao, X., Zhan, H., Hou, X., Feng, X., Zhou, X., Xu, G., Zhang, F., and Long, S.: ‘Interface-engineering induced swift and controllable solar-blind photoresponse in Ga2O3/SiC heterojunction based on unconventional rectification characteristics’, Advanced Functional Materials, 2024, 34, (33), pp. 2400498

  • Tan, P., Liu, T., Yang, Y., Chen, Y., Guan, Y., Li, Z., Yu, S., Yang, X., Xiang, X., Zhao, X., Li, Y., Ding, H., Wu, X., Fink, Z., Gao, S., Hou, X., Jiao, X., Zhu, J., Fan, F., Yang, S., Russell, T.P., Liu, X., Hu, Q., and Long, S.: ‘Flexible Soft X‐Ray Image Sensors based on Metal Halide Perovskites With High Quantum Efficiency’, Advanced materials, 2024, 36, (48), pp. 2407244

  • Peng, Z., Hou, X., Han, Z., Gan, Z., Li, C., Wu, F., Bai, S., Yu, S., Liu, Y., Yang, K., Feng, X., Zhan, H., Zhao, X., Xu, G., and Long, S.: ‘Ga2O3 Photon‐Controlled Diode for Sensitive DUV/X‐Ray Detection and High‐Resolution Array Imaging Application’, Advanced Functional Materials, 2024

  • Liu, Y., Yu, S., Zhang, Z., Hou, X., Ding, M., Zhao, X., Xu, G., Zhou, X., and Long, S.: ‘Reservoir Computing Based on Oxygen-Vacancy-Mediated X-ray Optical Synaptic Device for Medical CT Bone Diagnosis’, ACS Applied Materials & Interfaces, 2024, 16, (19), pp. 24871-24878

  • Huang, H., Yin, H., Han, K., Wang, Y., Wang, Z., Feng, X., Zou, Y., Zhou, X., Xu, G., Hou, X., Zhao, X., and Long, S.: ‘Robust Deep UV Photodetectors Based on One‐Step‐Grown Polycrystalline Ga2O3 Film via Pulsed Laser Deposition toward Extreme‐Environment Application’, Advanced Optical Materials, 2024, pp. 2400788

  • Hou, X., liu, Y., Bai, S., Yu, S., Huang, H., Yang, K., Li, C., Peng, Z., Zhao, X., Zhou, X., Xu, G., and Long, S.: ‘Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection’, Advanced materials, 2024, 36, (25), pp. 2314249

  • Gan, Z., Li, C., Hou, X., Yu, S., Bai, S., Peng, Z., Han, K., Zou, Y., Wang, Z., Zhao, X., Xu, G., and Long, S.: ‘Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD’, Applied Physics Letters, 2024, 125, (19)

  • Zhongfang ZHANG, P.T., Xiaohu HOU, Xiaolan MA, Mengfan DING, Shunjie YU, Guangwei XU, Xiaolong ZHAO* & Shibing LONG*: ‘Breaking the responsivity-speed dilemma of a-GaOx photodetector by alternating gate modulation’, SCIENCE CHINA Information Sciences, 2023, 66, pp. 229408:229401–229408:229402

  • Zeng, Y., Huang, H., Zhao, X., Ding, M., Hou, X., Zou, Y., Du, J., Liu, J., Yu, S., Han, K., Wu, Y., Zhou, X., Xu, G., and Long, S.: ‘Self-Powered a-SnOx/c-Ga2O3 pn Heterojunction Solar-Blind Photodetector with High Responsivity and Swift Response Speed’, IEEE Electron Device Letters, 2023, 44, (12), pp. 2003-2006

  • Yuan, Y., Li, Z., Hou, X., Zhao, X., Ding, M., Yu, S., Wang, Z., Liu, J., Xu, G., Jia, Z., Tao, X., Mu, W., and Long, S.: ‘Enhancing the Performance of β-Ga2O3 Solar-blind Photodetectors Based on ZnGa2O4 Substrate by Bottom-up Zn Diffusion Doping’, Journal of Alloys and Compounds, 2023, 969, pp. 171596

  • Ma, X., Hou, X., Tan, P., Ding, M., Zhao, X., Yang, Y., Xu, G., Hu, Q., and Long, S.: ‘Fast Speed Ga2O3 Solar-Blind Photodetectors with Low Temperature Process Engineering’, IEEE Electron Device Letters, 2023, 44, (11), pp. 1861-1864

  • Dong, X., Yu, S., Mu, W., Zhao, X., Liu, Y., Hou, T., Zhang, J., Chen, B., Li, Z., and Jia, Z.: ‘Wide-temperature-resistant semi-insulating Co: β-Ga 2 O 3 single crystal based high-temperature-stable solar-blind photodetectors’, Journal of Materials Chemistry C, 2023, 11, pp. 8919-8928

  • Ding, M., Hao, W., Yu, S., Liu, Y., Zou, Y., Xu, G., Zhao, X., Hou, X., and Long, S.: ‘Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector with Record Detectivity and Open Circuit Voltage’, IEEE Electron Device Lett, 2023, 44, (2), pp. 277-280

  • Zou, Y., Zeng, Y., Tan, P., Zhao, X., Zhou, X., Hou, X., Zhang, Z., Ding, M., Yu, S., Huang, H., He, Q., Ma, X., Xu, G., Hu, Q., and Long, S.: ‘Alleviating the Responsivity-Speed Dilemma of Photodetectors via Opposite Photogating Engineering with an Auxiliary Light Source beyond the Chip’, IEEE International Electron Devices Meeting (IEDM), 2022, pp. 19.15.11-19.15.14

  • Zhang, Z., Zhao, X., Zhang, X., Hou, X., Ma, X., Tang, S., Zhang, Y., Xu, G., Liu, Q., and Long, S.: ‘In-Sensor Reservoir Computing System for Latent Fingerprint Recognition with Deep Ultraviolet Photo-Synapses and Memristor Array’, Nature Commun, 2022, 13, (1), pp. 6590

  • Tan, P., Zou, Y., Zhao, X., Hou, X., Zhang, Z., Ding, M., Yu, S., Ma, X., Xu, G., Hu, Q., and Long, S.: ‘Hysteresis-Free Ga2O3 Solar-Blind Phototransistor Modulated from Photoconduction to Photogating Effect’, Appl Phys Lett, 2022, 120, (7), pp. 071106

  • Sheoran, H., Fang, S., Liang, F., Huang, Z., Kaushik, S., Manikanthababu, N., Zhao, X., Sun, H., Singh, R., and Long, S.: ‘High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities’, ACS  Appl. Mater. Interfaces, 2022, 14, (46), pp. 52096-52107

  • Liu, Q., and Zhao, X.: ‘Nonvolatile MOX RRAM assisted by graphene and 2D materials’, book, 2022, pp. 399-443

  • Hou, X., Zhao, X., Zhang, Y., Zhang, Z., Liu, Y., Qin, Y., Tan, P., Chen, C., Yu, S., Ding, M., Xu, G., Hu, Q., and Long, S.: ‘High-performance harsh-environment-resistant GaOX solar-blind photodetectors via defect and doping engineering’, Advanced materials, 2022, 34, (1), pp. 2106923

  • X. Hou, X. Zhao*,  S. Long*, High-performance harsh-environment-resistant GaOX solar-blind photodetectors via defect and doping engineering, Advanced Materials 2021, e2106923.[封面文章]

  • P. Tan, X. Zhao*, S. Long* et al., Balancing the transmittance and carrier-collection ability of Ag nanowire networks for high-performance self-powered Ga2O3  Schottky photodiode, Advanced Optical Materials 2021, 9, 2100173.

  • C. Chen, X. Zhao*,  S. Long* et al., High-performance β-Ga2O3 solar-blind photodetector with extremely low working voltage, IEEE Electron Device Letters 2021, 42, 1492.

  • X. Zhao, J. Ma, X. Xiao, Q. Liu*, L. Shao, D. Chen, S. Liu, J. Niu, X. Zhang, Y. Wang, R. Cao, W. Wang, Z. Di*, H. Lv, S. Long, and M. Liu, Breaking Current-Retention Dilemma in Cation-based Resistive Switching Device Utilizing Graphene with Controlled Defects, Advanced Materials, 2018, 30, 1705193.[封面文章]

  • X. Zhao, S. Liu, J. Niu, L. Liao, Q. Liu*, X. Xiao, H. Lv, S. Long, W. Banerjee, W. Li, S. Si, and M. Liu, Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer, Small, 2017, 13, 1603948.[封面文章]

  • X. Zhao, X. Zhang, D. Shang, Z. Wu, X. Xiao*, R. Chen, C. Tang, J. Liu, W. Li, H. Lv, C. Jiang*, Q. Liu*, and M. Liu, Uniform, Fast, and Reliable LixSiOy-based Resistive Switching Memory, IEEE Electron Device Letters, 2019, 40, 554.

  • S. Liu, N. Lu, X. Zhao (共同一作), H. Xu, W. Banerjee, H. Lv, S. Long, Q. Li, Q. Liu*, and M. Liu, Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory, Advanced Materials, 2016, 28, 10623.[封面文章]

  • 钟天晟, 赵晓龙*,  龙世兵* 等, 基于MOCVD外延超薄氧化镓薄膜的高性能日盲和X射线探测器, 光子学报 2021, 50, 1004001.

  • Y. Zhang, X. Zhao*,  S. Long*, M. Liu* et al., Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging, Nature Communications 2021, 10.1038/s41467-021-27575-z .

  • S. Yu, X. Zhao*, M. Ding, P. Tan, X. Hou, Z. Zhang, W. Mu, Z. Jia, X. Tao, G. Xu, S. Long, High-detectivity β-Ga2O3microflake solar-blind phototransistor for weak light detection, IEEE Electron Device Letters 2021, 42, 383.

  • S. Yu, M. Ding, W. Mu, Z. Jia, X. Hou, Z. Zhang, P. Tan, X. Zhao*, G. Xu, S. Long, β-Ga2O3 micro-flake FET SBPD with record detectivity of 3.87×1017 Jones for weak light detection, presented at 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021.

  • X. Hou, Y. Zou, M. Ding, Y. Qin, Z. Zhang, X. Ma, P. Tan, S. Yu, X. Zhou, X. Zhao*, G. Xu, H. Sun, S. Long, Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications, Journal of Physics D: Applied Physics 2020, 54, 043001.

  • X. Zhao, M. Ding, H. Sun, S. Long, Controlling different phases of gallium oxide for solar-blind photodetector application,SEMICONDUCTORS AND SEMIMETALS-Ultrawide Bandgap Semiconductors,  2021,chapter5.

  • X. Zhao, R. Wang, X. Xiang*, C. Lu, F. Wu, R. Cao, C. Jiang, and Q. Liu*, Flexible Cation-based Threshold Selector for Resistive Switching Memory Integration, SCIENCE CHINA Information Sciences, 2018, 61, 060413.

  • S. Si, W. Li, X. Zhao (共同一作), M. Han, Y. Yue, W. Wu, S. Guo, X. Zhang, Z. Dai, X. Wang, X. Xiao*, and C. Jiang, Significant Radiation Tolerance and Moderate Reduction in Thermal Transport of a Tungsten Nanofilm by Inserting Monolayer Graphene, Advanced Materials, 2017, 29, 1604623.

  • X. Zhao, J. Niu, Y. Yang, X. Xiao, R. Chen, Z. Wu, Y. Zhang, H. Lv, S. Long, Q. Liu, C. Jiang, M. Liu, Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application, Nanotechnology 2020, 31, 144002