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郑柘炀特任教授
主要研究方向：半导体理论、器件物理、器件设计、器件-电路交互、以及器件与集成电路的制备工艺
电话：
邮箱：eezyzheng@ustc.edu.cn
办公室：高新校区1号学科楼C314

个人简介

郑柘炀博士现为中国科学技术大学微电子学院特任教授、博士生导师。主要研究兴趣为半导体理论、器件物理、器件设计、器件-电路交互、以及器件与集成电路的制备工艺，尤其是宽禁带半导体材料与电子器件在高效电能转换（电力电子/功率电子）以及无线通信（射频电路）的应用。研究工作发表于Nature Electronics, IEEE Electron Device Letters, Advanced Materials, Applied Physics Letters, IEDM 和 ISPSD等高水平国际期刊和会议，其中关于GaN CMOS IC的研究获得2021年度中国半导体十大进展提名奖。

招生信息：课题组长期招收硕士/博士研究生、博士后，欢迎感兴趣的学生、学者通过邮件来函垂询。

 

更多信息：http://faculty.ustc.edu.cn/zhengzy


个人经历


  • 2012 – 2016：浙江大学，本科，电子科学与技术

  • 2016 – 2021：香港科技大学，博士，电子及计算机工程

  • 2021 – 2023：香港科技大学，博士后、客席助理教授、研究助理教授

  • 2023至今：中国科学技术大学，特任教授


论文

GaN p-FET and CMOS

  • Y. H. Ng, Z. Zheng, L. Zhang, R. Liu, T. Chen, S. Feng, Q. Shao, and K. J, Chen*, “Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure,” Appl. Phys. Lett., 123(14), 2023.

  •  L. Zhang, Z. Zheng*, W. Song, T. Chen, S. Feng, J. Chen, M. Hua, and K. J. Chen*, “Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack,” IEEE Electron Device Lett., 43(11), 1822, 2022. (editor's pick)

  •  Z. Zheng*, L. Zhang, W. Song, S. Feng, H. Xu, J. Sun, S. Yang, T. Chen, J. Wei, and K. J. Chen*, “Gallium nitride-based complementary logic integrated circuits,” Nature Electronics, 4(8), 595, 2021.

  •  L. Zhang, Z. Zheng*, Y. Cheng, Y. H. Ng, S. Feng, W. Song, T. Chen, and K. J. Chen*, “SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs,” in 2021 IEEE International Electron Device Meeting (IEDM).

  •  Z. Zheng, H. Xu, L. Zhang, and K. J. Chen*, “On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems,” Fundamental Research, 1(6), 661, 2021. (invited)

  •  Z. Zheng, W. Song, L. Zhang, S. Yang, J. Wei, and K. J. Chen*, “Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters,” IEEE Electron Device Lett., 42(1), 26, 2021. (editor's pick)

  •  Z. Zheng, W. Song, L. Zhang, S. Yang, J. Wei*, and K. J. Chen*, “High ION and ION/IOFF Ratio Enhancement-Mode Buried p-Channel GaN MOSFETs on p-GaN Gate Power HEMT Platform,” IEEE Electron Device Lett., 41(1), 26, 2020.

GaN/SiC Hybrid

  •  S. Feng*, Z. Zheng*, Y. Wang, G. Lyu, K. Liu, Y. Cheng, J. Chen, T. Chen, L. Zhang, W. Song, H. Liao, Y. H. Ng, M. Hua, K. Cheng, J. Wei, and K. J. Chen*, “HyFET—A GaN/SiC Hybrid Field-Effect Transistor,” in 2023 IEEE International Electron Device Meeting (IEDM).

  •  S. Feng, Z. Zheng*, Y. Cheng, Y. H. Ng, W. Song, T. Chen, L. Zhang, K. Liu, K. Cheng, and K. J. Chen*, “Strain release in GaN epitaxy on 4° off-axis 4H-SiC,” Advanced Materials, 34(23), 2201169, 2022.

Commercial GaN power HEMT

  •  H. Xu, Z. Zheng*, L. Zhang, J. Sun, S. Yang, J. He, J. Wei, and K. J. Chen*, “Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation,” in 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

  •  L. Zhang, Z. Zheng, S. Yang, W. Song, J. He, and K. J. Chen*, “p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability,” IEEE Electron Device Lett., 42(1), 22, 2021.

GaN power integration

  •  G. Lyu, J. Wei*, W. Song, Z. Zheng, L. Zhang, J. Zhang, Y. Cheng, S. Feng, Y. H. Ng, T. Chen, K. Zhong, J. Liu, R. Zeng, and K. J. Chen*, “A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs,” in 2021 IEEE International Electron Devices Meeting (IEDM).

  •  H. Xu, G. Tang, J. Wei, Z. Zheng, and K. J. Chen*, “Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs,” IEEE Trans. Ind. Electron., 69(7), 6784, 2022.

  •  K. J. Chen*, J. Wei, G. Tang, H. Xu, Z. Zheng, L. Zhang, and W. Song, “Planar GaN Power Integration – The World is Flat,” in 2020 IEEE International Electron Devices Meeting (IEDM). (invited)

GaN-on-Si sub-6GHz RF application

  •  Y. Cheng, Y. H. Ng, Z. Zheng, and K. J. Chen, “RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates,” IEEE Electron Device Lett., 44(1), 29, 2023.

  •  W. Song, Z. Zheng, T. Chen, J. Wei, L. Yuan, and K. J. Chen*, “RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure,” IEEE Electron Device Lett., 42(8), 1116, 2021.

  •  Z. Zheng, W. Song, J. Lei, Q. Qian, J. Wei, M. Hua, S. Yang, L. Zhang, and K. J. Chen*, “GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage,” IEEE Electron Device Lett., 41(9), 1304, 2020.

Stability & Reliability

  •  S. Yang, Z. Zheng, L. Zhang, W. Song, and K. J. Chen*, “GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation,” IEEE Electron Device Lett., 42(4), 489, 2021.

  •  J. Sun, Z. Zheng, K. Zhong, G. Lyu, and K. J. Chen*, “Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices,” IEEE Trans. Power Electron., 36(11), 12158, 2021.

Novel device

  •  T. Chen, Z. Zheng*, S. Feng, L. Zhang, W. Song, and K. J. Chen*, “GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping,” IEEE Electron Device Lett., 43(5), 697, 2022.

  •  L. Zhang, J. Wei, Z. Zheng, W. Song, S. Yang, H. Xu, and K. J. Chen*, “p-GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction,” IEEE Electron Device Lett., 41(3), 314, 2020.

  •  M. Hua*, J. Chen, C. Wang, L. Liu, L. Li, J. Zhao, Z. Jiang, J. Wei, L. Zhang, Z. Zheng, and K. J. Chen, “E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability,” in 2020 IEEE International Electron Devices Meeting (IEDM).


Note:   corresponding authors*,   authors with equal contribution