位置栏目

潘东方特任研究员
主要研究方向:功率/射频集成电路设计
电话:
邮箱:pdf1992@ustc.edu.cn
办公室:

个人简介

主要研究方向:功率/射频集成电路设计,包括全集成隔离电源芯片、硅基毫米波雷达收发芯片、CMOS功率放大器和高速数字隔离器等。主持多项国家自然科学基金项目、博士后科学基金和企业攻关项目等。在国际知名期刊和会议上发表论文40篇,其中第一作者发表集成电路设计领域顶级会议ISSCC和顶级期刊JSSC论文共5以及IEEE TCAS-I/IICICCESSCIRCIEEE MWTL。担任《微电子学》学报青年编委、IEEE JSSCTCAS-I/IIIEEE MWTL等国际知名期刊和会议审稿人。

  

个人经历

2014-2019 中国科学技术大学电子科学与技术专业硕博连读 工学博士

2018-2019 美国南卫理公会大学(SMU电子工程系 访问学者

2019-2022 中国科学技术大学微电子学院 博士后

2022-2025 中国科学技术大学微电子学院 特任副研究员

2025-至今 中国科学技术大学微电子学院 特任研究员


代表性工作

D. Pan, W. Xu, L. Zhang, Q. Huang and L. Cheng, A 2W 53.2%-Peak-Efficiency Multi-Core Isolated DC-DC Converter with Embedded Magnetic-Core Transformer Achieving CISPR-32 Class-B EMI Compliance and <5 mV Ripple, IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, USA, pp. 536-538, Feb. 2025.

Q. Huang#, D. Pan#, Z. Chen and L. Cheng, A Dual-LC-Resonant Isolated DC-DC Converter Achieving 65.4% Peak Efficiency and Inherent Backscattering, IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, USA, pp. 534-536, Feb. 2025. (#Equally Credited Authors)

D. Pan, A. Li, W. Sun and L. Cheng, An Isolated DC–DC Converter Using a Cross-Coupled Shoot-Through-Free Class-D Oscillator with Low EMI Emissions, IEEE Journal of Solid-State Circuits (JSSC), vol. 59, no. 10, pp. 3457-3467, Oct. 2024.

X. Zhang, B. Deng, L. Sun, D. Pan* and L. Cheng, A W-Band 0.18-dB RMS Gain and 0.97° Phase Error Active Phase Shifter in 28-nm CMOS, IEEE Microwave and Wireless Technology Letters (MWTL), vol. 34, no. 7, pp. 923-926, July 2024

D. Pan, G. Li, F. Miao, W. Sun, X. Gong, L. Zhang, L. Cheng. A 1.2W 51%-Peak-Efficiency Isolated DC-DC Converter with a Cross-Coupled Shoot-Through-Free Class-D Oscillator Meeting the CISPR-32 Class-B EMI Standard, 2022 IEEE International Solid- State Circuits Conference (ISSCC), San Francisco, CA, USA, 2022. pp. 240-242.

D. Pan, G. Li, F. Miao, B. Deng, J. Wei, D. Yu, M. Liu, L. Cheng. 33.5 A 1.25W 46.5%-Peak-Efficiency Transformer-in-Package Isolated DC-DC Converter Using Glass-Based Fan-Out Wafer-Level Packaging Achieving 50mW/mm2 Power Density, 2021 IEEE International Solid- State Circuits Conference (ISSCC), San Francisco, CA, USA, 2021, pp. 468-470. (First ISSCC paper from USTC)

D. Pan, Z. Duan; B. Wu; Y. Wang; D. Huang; Y. Wang; L. Sun; P. Gui; L. Cheng. A 76–81-GHz Four-Channel Digitally Controlled CMOS Receiver for Automotive Radars[J], in IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS-I), vol. 68, no. 3, pp. 1091-1101, March 2021.

D. Pan et al., “A 77-GHz Power Amplifier with Digital Power Control for Multi-Mode Automotive Radar in 28-nm Bulk CMOS,” IEEE Transactions on Circuits and Systems II: Express Briefs (TCAS-II), vol. 70, no. 3, pp. 875–879, 2023.