闫冬现任中国科学技术大学集成电路学院特任教授，博士生导师。长期从事模拟/功率集成电路研究，包括集成功率转换（DC/DC、AC/DC），宽禁带半导体（GaN/SiC）芯片集成技术，电源管理与模拟混合信号系统。在国际权威期刊与会议JSSC、TPEL、ISSCC、VLSI、ESSCIRC等发表学术论文十余篇，担任JSSC、TPEL等多个国际期刊与会议审稿人。

招生/招聘信息：课题组常年招收硕士研究生、博士研究生、博士后、特任副研究员等，欢迎有志于从事模拟功率集成电路研究的学生与学者咨询。同时欢迎大三、大四本科生参与暑期研究及毕业设计，支持保研、考研学生科研实践。请投送简历至dong_yan@ustc.edu.cn。

• 2016.8 – 2021.12 德克萨斯大学达拉斯分校，博士，电子工程

• 2014.9 – 2016.7 哈尔滨工业大学，硕士，微电子与固体电子学

• 2010.9 – 2014.6 哈尔滨工业大学，学士，电子信息科学与技术

• 2026.5 – 至今 中国科学技术大学，特任教授

• 2021.12 – 2026.4 德州仪器，模拟设计工程师

• D. Yan and D. B. Ma, “Online condition monitoring for GaN power devices with integrated dynamic on-resistance full profile scan and offset calibration,” IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 6215-6224, May 2024.

• D. Yan and D. B. Ma, “A monolithic GaN power IC with on-chip gate driving, level shifting and temperature sensing achieving direct 48V/1V DC-DC conversion,” IEEE Journal of Solid-State Circuits (JSSC), vol. 57, no. 12, pp. 3865-3876, Dec. 2022. (ISSCC invited submission).

• D. Yan and D. B. Ma, “A monolithic GaN direct 48V/1V AHB switching power IC with auto-lock auto-break level shifting, self-bootstrapped hybrid gate driving, and on-die temperature sensing,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, USA, Feb. 2022, pp. 232–235.

• D. Yan and D. B. Ma, “An automotive-use battery-to-load GaN-based switching power converter with anti-aliasing MR-SSM and in-cycle adaptive ZVS techniques,” IEEE Journal of Solid-State Circuits (JSSC), vol. 56, no. 4, pp. 1186-1196, Apr. 2021. (VLSI invited submission).

• D. Yan and D. B. Ma, “An automotive-use battery-to-load GaN-based power converter with anti-aliasing multi-rate spread-spectrum modulation and in-cycle ZVS switching,” in 2020 Symposium on VLSI Circuits (VLSI), Honolulu, USA, Jun. 2020, pp. 1-2.

• D. Yan, X. Ke and D. B. Ma, “Direct 48-/1-V GaN-based DC–DC power converter with double step-down architecture and master–slave AO2T control,” IEEE Journal of Solid-State Circuits (JSSC), vol. 55, no. 4, pp. 988-998, Apr. 2020. (VLSI invited submission)

• D. Yan, X. Ke and D. B. Ma, “A two-phase 2MHz DSD GaN power converter with master-slave AO2T control for direct 48V/1V DC-DC conversion,” in 2019 Symposium on VLSI Circuits (VLSI), Kyoto, Japan, Jun. 2019, pp. C170-C171.

• D. Yan, X. Ke and D. B. Ma, “Integrated single-stage bi-directional UPS with one-cycle mode switching and active deadtime control for automotive electronics,” in IEEE Energy Conversion Congress and Exposition (ECCE), Portland, USA, Sept. 2018, pp. 2081-2085.

• L. Du, D. Yan and D. B. Ma, “On-Chip Condition-Adaptive Δ f3 EMI Control for Switching Power ICs,” IEEE Journal of Solid-State Circuits, vol. 58, no. 12, pp. 3481-3491, Dec. 2023. (ISSCC invited submission).

• L. Du, D. Yan and D. B. Ma, “A Condition-Adaptive △f3-EMI Control GaN Switching Regulator With Modulation Frequency Envelope Tracking For Full-Spectrum Automotive CISPR 25 Compliance,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, CA, USA, 2023, pp. 304-306.

• X. Ke, D. Yan,J. Sankman et al., “A 3-to-40-V automotive-use GaN driver with active bootstrap balancing and VSW dual-edge dead-time modulation techniques,” IEEE Journal of Solid-State Circuits (JSSC), vol. 56, no. 2, pp. 521-530, Feb. 2021.