中国科学院微电子研究所研究员，研究方向包括微纳加工技术、新型非挥发存储技术、原位表征技术。

• 2016-至今 中国科学院微电子研究所，研究员
• 2012-2016 中国科学院微电子研究所，副研究员
• 2012-2012 中国科学院微电子研究所，助理研究员
• 2010-2012 中国科学院微电子研究所，博士后
• 2007-2010 安徽大学电子科学与技术学院，助教
• 2007-2010 安徽大学（与中国科学院微电子研究所联合培养）电子科学与技术学院，博士
• 2004-2007 安徽大学电子科学与技术学院，硕士
• 1998-2002 安徽大学物理系，学士

• 2015年中国电子学会科学技术进步奖自然科学类一等奖(第二完成人)
• 2015年中国科学院卢嘉锡青年人才奖
• 2014年中国自然基金委优秀青年科学基金项目
• 2014年北京市科学技术进步奖二等奖(第二完成人)
• 2013年安徽省优秀博士论文
• 2009年中国真空学会真空科学博士优秀论文

• Sen Liu#, Nianduan Lu#, Xiaolong Zhao#, Hui Xu, Writam Banerjee, Hangbing Lv, Shibing Long, Qingjiang Li,Qi Liu*, and Ming Liu*, “Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory”,Adv. Mater., 2016,DOI:10.1002/adma.201603293.
• Wenqing Li, Xinqiang Liu, Yongqiang Wang, Zhigao Dai, Wei Wu, Li Cheng, Yupeng Zhang,Qi Liu*, Xiangheng Xiao*, and Changzhong Jaing, “Design of high-performance memristor cell using W-implanted SiO2Films”,Appl. Phys. Lett., 108, 153501, 2016.
• Yao Wen, Qisheng Wang, Lei Yin,Qi Liu, Feng Wang, Fengmei Wang, Zhenxing Wang, Kaili Liu, Kai Xu, Yun Huang, Tofik Ahmed Shifa, Chao Jiang*, Jie Xiong*, and Jun He*, “Epitaxial 2D PbS nanoplates arrays with highly efficient infrared response”,Adv. Mater., 28, 8051-8057, 2016.
• Jiebin Niu, Meiyun Zhang, Yang Li, Shibing Long*, Hangbing Lv,Qi Liu, and Ming Liu*, “Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography”,J. Vac. Sci. Technol. B, 34(2), 02G105, 2016.
• Meiyun Zhang, Shibing Long*, Yang Li,Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé, and Ming Liu, “Analysis on the filament structure evolution in reset transition of Cu/HfO2/Pt RRAM device”,Nanoscale Research Letters, 11:269, 2016.
• Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv*, Tiancheng Gong, Shibing Long,Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, and Ming Liu*, “Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays”,Nanoscale, 8, 15629-15636, 2016.
• Hangbing Lv, Xiaoxin Xu, Pengxiao Sun, Hongtao Liu, Qing Luo,Qi Liu, Writam Banerjee, Haitao Sun, Shibing Long, Ling Li, and Ming Liu*, “Atomic view of filament growth in electrochemical memristive elements”,Scientific Reports, 5: 13311, 2015.
• Hangbing Lv, Xiaoxin Xu, Hongtao Liu, Ruoyu Liu,Qi Liu, Writam Banerjee, Haitao Sun, Shibing Long, Ling Li, and Ming Liu*, “Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory”,Scientific Reports, 5: 7764, 2015.
• Nianduan Lu, Ling Li, Pengxiao Sun, Ming Wang,Qi Liu, Hangbing Lv, Shibing Long, and Ming Liu, “A novel method of identifying the carrier transport path in metal oxide resistive random access memory”,J. Phys. D: Appl. Phys.48, 065101, 2015.
• Xiaoxin Xu, Hangbing Lv*, Hongtao Liu, Tiancheng Gong, Guoming Wang, Meiyun Zhang, Yang Li,Qi Liu, Shibing Long, and Ming Liu*, “Superior retention of low resistance state in conductive bridge random access memory with single filament formation”,IEEE, Electron Device Lett.,36 (2),129-131, 2015.
• Hongtao Liu, Baohe Yang, Hangbing Lv, Xiaoxin Xu, Qing Luo, Guoming Wang, Meiyun Zhang, Shibing Long,Qi Liu, and Ming Liu, “Effect of Pulse and dc Formation on the performance of one-transistor and one-resistor resistance random access memory devices”,Chin. Phys. Lett., 32 (2), 028502, 2015.
• Xiaoxin Xu, Hangbing Lv, Yuxiang Li, Hongtao Liu, Ming Wang,Qi Liu, Shibing Long, and Ming Liu, “Degradation of gate voltage controlled multilevel storage in one transistor one resistor electrochemical metallization cell”,IEEE, Electron Device Lett.,36 (6),555-557, 2015.
• Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Tianchun Ye, Yang Li, Dinglin Xu, Hangbing Lv,Qi Liu, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Jordi Suñé, and Ming Liu, “Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation”,Appl. Phys. Lett., 106 (9), 092103, 2015.
• Writam Banerjee, Xiaoxin Xu, Hongtao Liu, Hangbing Lv,Qi Liu, Haitao Sun, Shibing Long, and Ming Liu, “Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory”,IEEE, Electron Device Lett.,36 (4),333-335, 2015.
• Pengxiao Sun, Nianduan Lu, Ling Li, Yingtao Li, Hong Wang, Hangbing Lv,Qi Liu, Shibing Long, Su Liu, and Ming Liu, “Thermal crosstalk in 3-dimensional RRAM crossbar array”,Scientific Reports, 5: 13504, 2015.
• Meiyun Zhang, Guoming Wang, Shibing Long, Zhaoan Yu, Yang Li, Dinglin Xu, Hangbing Lv,Qi Liu, Enrique Miranda,Jordi Suñé, and Ming Liu, “A physical model for the statistics of the set switching time of resistive RAM measured with the width-adjusting pulse operation method”,IEEE Electron Device Lett., 36 (12), 1303-1305, 2015.
• Haitao Sun,Qi Liu*, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li and Ming Liu*, “Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology”,Adv. Funct. Mater.,24, 5679-5689, 2014.
• Haitao Sun,Qi Liu*, Shibing Long, Hangbing Lv, Writam Banerjee, and Ming Liu*, “Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device,”J. Appl. Phys.,116, 154509, 2014.
• Ming Wang, Chong Bi, Ling Li, Shibing Long,Qi Liu, Hangbing Lv, Nianduan Lu, Pengxiao Sun, and Ming Liu*, “Thermoelectric Seebeck effect in oxide based resistive switching memory”,Nature Communications,5, 4598, 2014.
• Kai Dai, Luhua Lu,Qi Liu, Guangping Zhu, and Qinzhuang Liu, “A facile surfactant-free method to prepare Ti0.95Er0.05O2nanocrystal and its photocatalytic performance”,Catalysis Communications, 43,2o2-206, 2014.
• Kai Dai, Luhua Lu,Qi Liu*, Guangping Zhu, Qinzhuang Liu, and Zhongliang Liu, “Graphene oxide capturing surface-fluorinated TiO2nanosheets for advanced photocatalysis and the reveal of synergism reinforce mechanism”,Dalton Transactions, 43,22o2-2210, 2014.
• Chong Bi, Lin Huang, Shibing Long,Qi Liu, Zhihong Yao, Ling Li, Zongliang Huo, Liqing Pan, and Ming Liu, “Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current,”Appl. Phys. Lett., 105, 022407, 2014.
• Kai Dai, Luhua Lu, Changhao Liang,Qi Liu, and Guangping Zhu, “Heterojunction of facet coupled g-C3N4/surface-fluorinated TiO2nanosheets for organic pollutants degradation under visible LED light irradiation”,Applied Cataylsis B: Environmental,156-157,331-340, 2014.
• Jinlong Lu, Jing Luo, Hongpeng Zhao, Jin Yang, Xianwei Jiang,Qi Liu, Xiaofeng Li, and Yuehua Dai, “Optimal migration route of Cu in HfO2,”Journal of Semiconductors,35 (1),013001, 2014.
• Yuanyang Zhao, Jiayu Wang, Jianbing Xu, Fei Yang,Qi Liu, and Yuehua Dai, “Metal dopants in HfO2-based RRAM: first principle study”,Journal of Semiconductors,35 (4),042002, 2014.
• Xiaobing Yan, Y. F. Chen, H. Hao,Qi. Liu, E. P. Zhang, S. S. Shi, J. Z. Lou, “Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films”,Appl. Phys. Lett., 105, 072104, 2014.
• Kai Dai, Jiali Lv, Luhua Lu,Qi Liu, Guangping Zhu and Dongpei Li, “Synthesis of micro-nano heterostructure AgBr/ZnO composite for advanced visible light photocatalysis”,Materials Letters,130,5-8, 2014.
• Hongtao Liu, Hangbin Lv, Baohe Yang, Xiaoxin Xu, Ruoyu Liu,Qi Liu, Shibing Long, and Ming Liu, “Uniformity improvement in 1T1R RRAM with gate voltage ramp programming”,IEEE, Electron Device Lett.,35 (12),1224-1226, 2014.
• Meiyun Zhang, Shibing Long, Guoming Wang, Xiaoxin Xu, Yang Li,Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Sune, and Ming Liu. “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt”,Appl. Phys. Lett., 105, 193501, 2014.
• Meiyun Zhang, Shibing Long, Guoming Wang, Yang Li, Xiaoxin Xu, Hongtao Liu, Ruoyu Liu, Ming Wang, Congfei Li, Pengxiao Sun, Haitao Sun,Qi Liu, Hangbing Lv, and Ming Liu,“An overview of the switching parameter variation of RRAM”,Chinese Science Bulletin, 59 (36), 5324-5337, 2014.
• Kai Dai, Luhua Lu,Qi Liu*, Guangping Zhu, and Qinzhuang Liu, “A facile surfactant-free method to prepare Ti0.95Er0.05O2nanocrystal and its photocatalytic performance”,Catalysis Communications, 43, 202-206, 2014.
• Kai Dai, Dongpei Li, Luhua Lu,Qi Liu*, Jiali Lv, and Guangping Zhu, “Facile synthesis of a reduced graphene oxide/cobalt sulfide hybrid and its electrochemical capacitance performance”,RSC Adv., 4, 29216, 2014.
• Guoming Wang, Shibing Long, Meiyun Zhang, Yang Li, Xiaoxin Xu, Hongtao, Liu, Ming Wang, Pengxiao Sun, Haitao Sun,Qi Liu, Hangbing Lv, Baohe Yang, and Ming Liu, “Operation methods of resistive random access memory”,Science China Technological Sciences, 57 (12), 2295-2304, 2014.
• Qi Liu,Jun Sun, Hangbing Lv, Shibing Long, Ling Li, Kuibo Yin, Neng Wan, Litao Sun, and Ming Liu,“Response to “comment onreal-timeobservation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM,”Adv. Mater.,25 (2), 165-167, 2013.
• Qi Liu, Jun Sun, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu, “In-situobservation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory,”Appl. Phys. Lett.,102, 053502, 2013.
• Hangbing Lv, Yingtao Li,Qi Liu, Shibing Long, Ling Li, and Ming Liu, “Self-rectifying resistive switching device with a-Si/WO3bilayer,”IEEE, Electron Device Lett.,34 (12),229-231, 2013.
• Yingtao Li,Hangbing Lv,Qi Liu,Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu, “Bipolar one diode-one resistor integration for high-density resistive memory applications,”Nanoscale,5, 4785-4789, 2013.
• Qiang Zhao, Maoxiu Zhou, Wei Zhang,Qi Liu, Xiaofeng Li, Ming Liu, and Yuehua Dai, “Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study,”Journal of Semiconductors,34 (3),032001, Mar. 2013.
• Haitao Sun, Hangbing Lv,Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Xiaoyu Liu, Xiaoyi Yang, Jiebin Niu, and Ming Liu, “Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament,”IEEE, Electron Device Lett.,34 (7),873-875, 2013.
• Xiaoyi Yang, Shibing Long, Kangwei Zhang, Xia Jordi Suñéoyu Liu, Xiaojuan Lian,Qi Liu, Hangbing Lv, Ming Liu, Hongwei Xie, Haitao Sun, Pengxiao Sun, and Ming Liu,“Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology”,J. Phys. D: Appl. Phys.46, 245107, 2013.
• Qi Liu, Jun Sun, Hangbing Lv, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Litao Sun, and Ming Liu, “Real-timeobservation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM”,Adv. Mater., 24 (14), 1844-1849, 2012.
• Hongwei Xie,Qi Liu, Yingtao Li, Hangbing Lv, Ming Wang, Kangwei Zhang, Shibing Long, Su Liu, and Ming Liu, “Effect of low constant current stress treatment on the performance of Cu/ZrO2/Pt resistive switching device”,Semicond. Sci. Technol., 27 (10), 105007, 2012.
• Ming Wang, Hangbing Lv,Qi Liu, Yingtao Li, Zhongguang Xu, Shibing Long, Hongwei Xie, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang and Ming Liu, “Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance”,IEEE, Electron Device Lett., 33 (11), 1556-1558, 2012.
• Sen Zhang,Qi Liu, Wei Wang, Hangbing Lv, Qingyun Zuo, Yan Wang, Yingtao Li, Wentai Lian, Shibing Long, Qin Wang, Ming Liu, “Programming Resistive Switching Memory by a Charged Capacitor”,Applied Physics A, 102, 1003-1007, 2011.
• Shibing Long,Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, Ming Liu, “Resistive Switching Mechanism of Ag/ZrO2:Cu/Pt Memory Cell”,Applied Physics A, 102, 915-919, 2011.
• Wentai Lian, Hangbing Lv,Qi Liu, Shibing Long, Wei Wang, Yan Wang, Yingtao Li, Sen Zhang, Yuehua Dai, Junning Chen, and Ming Liu, “Improved resistive switching uniformity in Cu/HfO2/Pt device by using current sweeping mode”,IEEE, Electron Device Lett., 32 (8), 1053-1055, 2011.
• Yingtao Li, Shibing Long, Hangbing Lv,Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu, “Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device”,IEEE, Electron Device Lett., 32 (3), 363-365, 2011.
• Yingtao Li, Shibing Long, Hangbing Lv,Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Zongliang Huo, Su Liu, and Ming Liu, “Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer”,Nanotechnology, 22, 254028, 2011.
• Qi Liu, Shibing Long, Hangbing Lv, et al., “Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using metal nanocrystal cover bottom electrode”,ACS Nano, 4 (10), 6162-6168, 2010.
• Qi Liu, Shibing Long, Wei Wang, et al., “Low power and highly uniform switching in ZrO2-based ReRAM with a Cu nanocrystal insertion layer”,IEEE, Electron Device Lett., 31 (11), 1299-1301, 2010.
• Yan Wang,Qi Liu, Shibing Long, Wei Wang, Qin Wang, Manhong Zhang, Sen Zhang, Yingtao Li, Qingyun Zuo, Jianhong Yang, and Ming Liu, “Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications”,Nanotechnology, 21, 045202, 2010.
• Yingtao Li, Shibing Long,Qi Liu, Qin Wang, Manhong Zhang, Hangbing Lv, Lubing Shao, Yan Wang, Sen Zhang, Qingyun Zuo, Su Liu, and Ming Liu, “Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures,”Phys. Status Solidi RRL., 4, 124-126, 2010.
• Yingtao Li, Shibing Long, Manhong Zhang,Qi Liu, Sen Zhang, Yan Wang, Qingyun Zuo, and Su Liu, and Ming Liu “Resistive switching properties of Au/ZrO2/Ag structure for low voltage nonvolatile memory applications”,IEEE, Electron Device Lett., 31 (2), 117-119, 2010.
• Qingyun Zuo, Shibing Long, Shiqian Yang,Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, and Ming Liu, “ZrO2-based memory cell with a self-rectifying effect for crossbar WORM memory application,”IEEE, Electron Device Lett., 31 (4), 344-346, 2010.
• Yan Wang, Hangbing Lv, Wei Wang,Qi Liu, shibing Long, Qin Wang, Zongliang Huo, Sen Zhang, Yingtao Li, Qingyun Zuo, Wentai Lian, Jianhong Yang and Ming Liu, “Highly stable radiation hardened resistive switching memory,”IEEE, Electron Device Lett., 31 (12), 1470-1472, 2010.
• Brian Butcher, Xiaoli He, Mengbing Huang, Yan Wang,Qi Liu, Hangbing Lv, Ming Liu, and Wei Wang, “Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices,”Nanotechnology, 21, 475205, 2010.
• Qi Liu, Shibing Long, Wei Wang, et al., “Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions”,IEEE Electron Devices Lett., 30 (12), 1335-1337, 2009.
• Qi Liu, Chunmeng Dou, Yan Wang, et al., “Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device”,Appl. Phys. Lett., 95, 023501, 2009.
• Yu Chao Yang, Feng Pan,Qi Liu, Ming Liu, and Fei Zeng, “Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application”,Nano Lett., 9 (4), 1634-1643, 2009.
• Qingyun Zuo, Shibing Long,Qi Liu, Sen Zhang, Qin Wang, Yingtao Li, Yan Wang, and Ming Liu, “Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory”,J. Appl. Phys., 106, 073724 (2009).
• Ming Liu, Z. Abid, Wei Wang, Xiaoli He,Qi Liu, and Weihua Guan, “Multilevel resistive switching with ionic and metallic filaments”,Appl. Phys. Lett., 94, 233106 (2009).
• Qi Liu, Weihua Guan, Shibing Long, et al., Resistive switching memory effect of ZrO2films with Zr+implanted,Appl. Phys. Lett., 92, 012117, 2008.
• Qi Liu, Weihua Guan, Shibing Long, et al.,“Resistance switching of Au-implanted-ZrO2film for nonvolatile memory application”,J. Appl. Phys., 104, 114514, 2008.
• Weihua Guan, Shibing Long,Qi Liu, Ming Liu, and Wei Wang, “Nonpolar nonvolatile resistive switching in Cu doped ZrO2”,IEEE Electron Devices Lett., 29, 5, pp.434-437, 2008.
• Weihua Guan, Ming Liu, Shibing Long,Qi Liu, and Wei Wang,“On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt”,Appl. Phys. Lett., 93, 22, 2008.
• Qin Wang, Rui Jia, Weihua Guan, Weilong Li,Qi Liu, Yuan Hu, Shibing Long, Baoqin Chen, Ming Liu, Tianchun Ye, Wensheng Lu, Long Jiang, “Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystals nonvolatile memory”,J. Phys. D: Appl. Phy, 41, 035109, 2008.
• Weihua Guan, Shibing Long, Ming Liu,Qi Liu, Yuan Hu, Zhigang Li and Rui Jia, “Modeling of retention characteristics for metal and semiconductor nanocrystal memories”,Solid-State Electronics, 51, 806, 2007.
• Weihua Guan, Shibing Long, Ming Liu, Zhigang Li, Yuan Hu, andQi Liu, “Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide”,J. Phys. D: Appl. Phys., 40, 2754 (2007).
• Qi Liu*, Sen Liu, Xiaolong Zhao, Hangbing Lv, Shibing Long and Ming Liu, “High reliability of cation-based resistive switching memory with graphene barrier layer”,International Symposium on Device and Applications of Two-dimensional Materials, June 20 – July 2, 2016, Shanghai, China. (invited)
• Xiaoxin Xu, Qing Luo, Tiancheng Gong, Hangbing Lv*, Shibing Long,Qi Liu, Steve S. Chung, Jing Li, and Ming Liu*, “Fully CMOS compatible 3D vertical RRAM with self-aligned self-selective cell enabling sub-5nm scaling”,Symposia on VLSI Technology and Circuits (VLSI 2016), June 13–17, 2016, Honolulu, HI, USA.
• Qi Liu,Haitao Sun, Hangbing Lv, Shibing Long and Ming Liu*, “Multimode of resistive switching behaviors in Ag/SiO2/Pt device”,International Workshop “Advances in ReRAM: Materials & Interfaces”,October, 11-16, 2015, Crete, Greece. (oral)
• Haito Sun,Qi Liu*, Dinglin Xu, Keke Zhang, Hangbing Lv, Writam Banerjee, Shibing Long, and Ming Liu*, “Understanding of the abnormal unipolar resistance switching behavior in CBRAM”,International Conference on Solid State Devices and Materials (SSDM 2015), September 27-30, 2015, Sapporo, Japan. (oral)
• Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long,Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Steve S. Chung, Jing Li, and Ming Liu, “Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells”,IEEE International Electron Devices Meeting (IEDM 2015), December 7–9, 2015, Washington, DC, USA.
• Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long,Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Nianduan Lu, and Ming Liu, “Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (~pA) and high endurance (>1010)”,IEEE International Electron Devices Meeting (IEDM 2015), December 7–9, 2015, Washington, DC, USA.
• Yan Wang, Jinshun Bi, Jing Liu,Qi Liu, Hangbing Lv, Shinbing Long, and Ming Liu, “The TID effects of RRAM based oxide material”,15th European Conference on Radiation and Its Effects on Components and Systems (RADECS), September 14-18, 2015, Moscow, Russia.
• Qi Liu*, Haitao Sun, Congfei Li, Shibing Long, Hangbing Lv, and Ming Liu, “Coexistence of memory and threshold resistive switching in Ag/SiO2/Pt device”,BIT’s 4th Annual world Congress of Nano Science & Technology, October 29-31, 2014, Qingdao, China. (invited)
• Haitao Sun,Qi Liu*, Shibing Long, Hangbing Lv, and Ming Liu*, “Realizing multimode of resistive switching in single Ag/SiO2/Pt device via tuning forming compliance current”,International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 28-30, 2014, Hsinchu, Taiwan.
• Haitao Sun,Qi Liu*, Shibing Long, Hangbing Lv, and Ming Liu*, “Microscopic origin of transition from threshold switching to memory switching in oxide-electrolyte-based RRAM”,IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 28-31, 2014, Guilin, China.
• Ming Liu*,Qi Liu, Shibing Long and Hangbing Lv, “Microscopic mechanism of solid-electrolyte-based resistive switching memory”,7th International Conference on Materials for Advanced Technologies (ICMAT 2013), 30 June to 5 July, 2013, Suntec, Singapore. (Invited)
• Ming Liu*,Qi Liu, Haitao Sun, Congfei Li, Hangbing Lv, Shibing Long, “Microscopic origin of transition from threshold switching to memory switching in oxide-electrolyte-based RRAM”,3rd International Workshop on Resistive Memories, October 17-18, 2013, Leuven, Belgium. (Invited)
• Ming Liu*,Qi Liu, Haitao Sun, Shibing Long, Hangbing Lv, Yingtao Li, and Yan Wang, “Microscopic mechanism of resistive switching memory: uncovering by transmission electron microscope characterization”,China Semiconductor Technology International Conference (CSTIC2013), March 17-18, 2013, Kerry Hotel, Shanghai. (Invited)
• Qi Liu, Ming Liu*, Shibing Long and Hangbing Lv, “Filaments in Oxide-Solid-Electrolyte-Based RRAM”,the 10th Pacific Rim Conference on Ceramic and Glass Technology, June 2-7, 2013, San Diego, CA, USA. (Invited)
• Hangbing Lv,Qi Liu, Yingtao Li, Ming Wang, Xiaoyu Liu, Haitao Sun, Hongwei Xie, Xiaoyi Yang, Zongliang Huo, Shibing Long, Ming Liu, “Self-rectifying bistable resistor for advanced memory application”,The 5th IEEE International Memory Workshop (IMW), May 26-29, 2013, Monterey, CA.
• Jun Sun, Xing Wu, Qi Liu, Ming Liu, Litao Sun, “Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM”, 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 15-19, 2013, Suzhou, China.
• Ming Liu,Qi Liu, Hangbing Lv, Shibing Long, and Yingtao Li, “Dynamic growth/dissolution of conductive filament in oxide electrolyte-based RRAM,”Nature Conference—Frontiers in Electronic Materials: Correlation Effects and Memristive Phenomena,17-20 June, 2012, Aachen, Germany.
• Ming Wang, Hangbing Lv,Qi Liu, Tingtao Li, Hongwei Xie, Shibing Long, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu, “Study of One Dimension Thickness Scaling on the RRAM Device Performance”,IEEE International Memory Workshop (IMW), May 20-23, 2012, Milan, Italy.
• Qi Liu, Ming Liu, Shibing Long, Hangbing Lv, and Wei Wang, “The characteristics and mechanism of ZrO2-based-ReRAM”,IEEE International NanoElectronics Conference (INEC 2011), 21-24 June 2011, Taiwan.
• Qi Liu, Ming Liu, Hangbing Lv, Shibing Long, and Wei Wang, “Doping technology: An effective way to improve the performances of resistive switching memory”,11th International Workshop on Junction Technology (IWJT 2011), 9-10 June 2011, Kyoto, Japan.
• Qi Liu, Hangbing Lv, Shibing Long, Wei Wang, Yintao Li, Yan Wang, Ming Wang, Kangwei Zhang, Hongwei Xie, and Ming Liu, “Improving switching characteristics of Cu/SixNy/Pt device with low voltage stress to perform forming”,International Conference on Solid State Devices and Materials (SSDM 2011), 28-30 September 2011, Nagoya, Japan.
• Ming Liu,Qi Liu, Hangbing Lv, Yingtao Li, and Shibing Long, “Study on the dynamic growth/rupture of conductive filament in ZrO2-based CBRAM”,1st International Workshop on Resistive RAM, 20-21 October 2011, Leuven, Belgium.
• Qi Liu, Ming Liu, Shibing Long, et al., “Improvement of resistive switching properties in ZrO2-based ReRAM with implanted metal ions”,The 39th European Solid-State Device Research Conference and the 35th European Solid-State Circuits Conference (ESSDERC/ESSCIRC 2009), 14-18 September 2009, Athens, Greece.
• Qi Liu, Shibing Long, Qin Wang, et al., “Bistable resistance switching of Cu/Ti:ZrO2/Pt for Nonvolatile memory application”,The international semiconductor technology conference (ISTC 2009), 19-21 March 2009, ShangHai, China, (3rd best student awards), and published inECS Transactions, 18 (1) 49-54 (2009).