主要研究方向为宽禁带半导体光电探测器、新型智能传感器、忆阻器。基于光电探测器及忆阻器的研究，以第一/通讯作者身份在Nature Communications、Advanced Materials、Nano Letters、Advanced Functional Materials、Small、IEEE EDL/IEDM、Applied Physics Letters等期刊及会议发表学术论文40余篇，合作发表SCI论文80余篇，相关成果Google学术引用3500余次，公开/授权专利30余项。担任IEEE EDL/TED、Applied Physics A 、Microelectronics Engineering、Journal of the Electron Devices Society等国际知名期刊审稿人。  

• 2015-2019 武汉大学与中国科学技术大学联合培养，博士

• 2019-至今 中国科学技术大学微电子学院

• X. Hou, X. Zhao*,  S. Long*, High-performance harsh-environment-resistant GaOX solar-blind photodetectors via defect and doping engineering, Advanced Materials 2021, e2106923.[封面文章]

• P. Tan, X. Zhao*, S. Long* et al., Balancing the transmittance and carrier-collection ability of Ag nanowire networks for high-performance self-powered Ga2O3  Schottky photodiode, Advanced Optical Materials 2021, 9, 2100173.

• C. Chen, X. Zhao*,  S. Long* et al., High-performance β-Ga2O3 solar-blind photodetector with extremely low working voltage, IEEE Electron Device Letters 2021, 42, 1492.

• X. Zhao, J. Ma, X. Xiao, Q. Liu*, L. Shao, D. Chen, S. Liu, J. Niu, X. Zhang, Y. Wang, R. Cao, W. Wang, Z. Di*, H. Lv, S. Long, and M. Liu, Breaking Current-Retention Dilemma in Cation-based Resistive Switching Device Utilizing Graphene with Controlled Defects, Advanced Materials, 2018, 30, 1705193.[封面文章]

• X. Zhao, S. Liu, J. Niu, L. Liao, Q. Liu*, X. Xiao, H. Lv, S. Long, W. Banerjee, W. Li, S. Si, and M. Liu, Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer, Small, 2017, 13, 1603948.[封面文章]

• X. Zhao, X. Zhang, D. Shang, Z. Wu, X. Xiao*, R. Chen, C. Tang, J. Liu, W. Li, H. Lv, C. Jiang*, Q. Liu*, and M. Liu, Uniform, Fast, and Reliable LixSiOy-based Resistive Switching Memory, IEEE Electron Device Letters, 2019, 40, 554.

• S. Liu, N. Lu, X. Zhao (共同一作), H. Xu, W. Banerjee, H. Lv, S. Long, Q. Li, Q. Liu*, and M. Liu, Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory, Advanced Materials, 2016, 28, 10623.[封面文章]

• 钟天晟, 赵晓龙*,  龙世兵* 等, 基于MOCVD外延超薄氧化镓薄膜的高性能日盲和X射线探测器, 光子学报 2021, 50, 1004001.

• Y. Zhang, X. Zhao*,  S. Long*, M. Liu* et al., Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging, Nature Communications 2021, 10.1038/s41467-021-27575-z .

• S. Yu, X. Zhao*, M. Ding, P. Tan, X. Hou, Z. Zhang, W. Mu, Z. Jia, X. Tao, G. Xu, S. Long, High-detectivity β-Ga2O3microflake solar-blind phototransistor for weak light detection, IEEE Electron Device Letters 2021, 42, 383.

• S. Yu, M. Ding, W. Mu, Z. Jia, X. Hou, Z. Zhang, P. Tan, X. Zhao*, G. Xu, S. Long, β-Ga2O3 micro-flake FET SBPD with record detectivity of 3.87×1017 Jones for weak light detection, presented at 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021.

• X. Hou, Y. Zou, M. Ding, Y. Qin, Z. Zhang, X. Ma, P. Tan, S. Yu, X. Zhou, X. Zhao*, G. Xu, H. Sun, S. Long, Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications, Journal of Physics D: Applied Physics 2020, 54, 043001.

• X. Zhao, M. Ding, H. Sun, S. Long, Controlling different phases of gallium oxide for solar-blind photodetector application，SEMICONDUCTORS AND SEMIMETALS-Ultrawide Bandgap Semiconductors,  2021,chapter5.

• X. Zhao, R. Wang, X. Xiang*, C. Lu, F. Wu, R. Cao, C. Jiang, and Q. Liu*, Flexible Cation-based Threshold Selector for Resistive Switching Memory Integration, SCIENCE CHINA Information Sciences, 2018, 61, 060413.

• S. Si, W. Li, X. Zhao (共同一作), M. Han, Y. Yue, W. Wu, S. Guo, X. Zhang, Z. Dai, X. Wang, X. Xiao*, and C. Jiang, Significant Radiation Tolerance and Moderate Reduction in Thermal Transport of a Tungsten Nanofilm by Inserting Monolayer Graphene, Advanced Materials, 2017, 29, 1604623.

• X. Zhao, J. Niu, Y. Yang, X. Xiao, R. Chen, Z. Wu, Y. Zhang, H. Lv, S. Long, Q. Liu, C. Jiang, M. Liu, Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application, Nanotechnology 2020, 31, 144002