主要研究方向是宽禁带半导体高能光子探测器。近 5 年主要围绕材料生长优化、新型探测器结构设计、器件缺陷表征及工作机理揭示这一条主线开展工作。在 Advanced Materials, Advanced Functional Materials, IEEE Electron Device Letters, Applied Physics Letters 等期刊和会议上发表文章 20 余篇。

• 2024-至今 中国科学技术大学，特任副研究员，微电子学院

• 2022-2024 中国科学技术大学，博士后，微电子学院

• 2017-2022 中国科学技术大学，博士，电子科学与技术

• 2013-2017 青岛理工大学，学士，电子信息科学与技术

• [1] Hou X, Zhao X, Zhang Y, et al. High‐performance harsh‐environment‐resistant GaOX solar‐blind photodetectors via defect and doping engineering. Advanced Materials, 2022, 34(1): 2106923 （封面文章）. 
  

• [2] Hou X, Liu Y, Bai S, et al. Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection. Advanced Materials, 2024: 2314249.

• [3] Peng Z, Hou X#, Han Z, et al. Ga2O3 Photon‐Controlled Diode for Sensitive DUV/X‐Ray Detection and High‐Resolution Array Imaging Application. Advanced Functional Materials, 2405277.

• [4] Wang, Z., Han, K., Huang, H., Zhao, X. *, Zhan, H., Hou, X. *, ... & Long, S. *. Interface‐Engineering Induced Swift and Controllable Solar‐Blind Photoresponse in Ga2O3/SiC Heterojunction Based on Unconventional Rectification Characteristics. Advanced Functional Materials, 2400498.

• [5] Tan P#, Zhao X#, Hou X#, et al. Balancing the transmittance and carrier‐collection ability of Ag nanowire networks for high‐performance self‐powered Ga2O3 Schottky photodiode. Advanced Optical Materials, 2021, 9(15): 2100173.

• [6] Liu, Y., Yu, S., Zhang, Z., Hou, X. *, Ding, M., Zhao, X. *, ... & Long, S *. (2024). Reservoir Computing Based on Oxygen-Vacancy-Mediated X-ray Optical Synaptic Device for Medical CT Bone Diagnosis. ACS Applied Materials & Interfaces.

• [7] Hou X, Sun H, Long S, et al. Ultrahigh-Performance Solar-Blind Photodetector Based on alpha-Phase-Dominated Ga2O3 Film with Record Low Dark Current of 81 fA. IEEE Electron Device Letters, 2019, 40(9): 1483-1486.

• [8] Yu S, Liu Y, Hou X*, et al. Stable Ga2O3 soft x-ray detector with ultrahigh responsivity. Applied Physics Letters, 2024, 124(18).

• [9] Ma X, Hou X, Tan P, et al. Fast Speed Ga2O3 Solar-Blind Photodetectors with Low Temperature Process Engineering. IEEE Electron Device Letters, 2023, 44(11):1861-1864.

• [10] Chen C, Zhao X, Hou X, et al. High-performance β-Ga2O3 solar-blind photodetector with extremely low working voltage. IEEE Electron Device Letters, 2021, 42(10): 1492-1495.

• [11] Ding, M., Hao, W., Yu, S., Liu, Y., Zou, Y., Hou X*, ... & Long, S*. Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage. IEEE Electron Device Letters, 2022, 44(2), 277-280.

• [12] Hou X, Zou Y, Ding M, et al. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications. Journal of Physics D: Applied Physics, 2020, 54(4): 043001（高被引文章）.