石媛媛博士，现任中国科学技术大学微电子学院特任教授，博士生导师，国家海外高层次青年人才。一直致力于探索后摩尔时代集成电路逻辑、存储与新型计算的技术路线，在相关领域发表学术论文70余篇，包括Nature Electronics (2篇)，IEDM (6篇)，Advanced Materials，ACS Nano，Nano Letters，EDL等，获国际发明专利5项，并撰写了专著章节2章。主持多个国家自然科学基金项目，担任IEEE EDS Nanotechnology 委员会成员和IEEE多个国际会议的技术委员会成员，包括IRPS, IPFA, EDTM等, 同时也担任Nature, Nature Electronics, Nature Materials以及IEEE EDL等国际知名期刊的审稿人。Google scholar: https://scholar.google.com/citations?user=YnfCqQkAAAAJ&hl=en

主要研究内容：

1. 晶圆级二维半导体材料、器件与集成电路

2. 新型薄膜晶体管设计、微纳制造与器件物理

3. 新型逻辑和存储器件与电路

4. 低功耗类脑计算神经形态器件与系统

招聘信息：课题组 (iNext lab) 常年招收硕士研究生、博士研究生、博士后研究员、特任副研究员等，欢迎感兴趣的学者投送简历至yuanyuanshi@ustc.edu.cn咨询。

·  2022-至今  中国科学技术大学微电子学院，特任教授

·  2020-2022  欧洲微电子研究中心（IMEC），高级研究员

· 2019-2020   欧洲微电子研究中心（IMEC），博士后研究员

· 2018-2019   以色列理工学院 （Technion），博士后研究员

·  2016-2017  斯坦福大学（Stanford University），博士交流生

·  2018           巴塞罗那大学（University of Barcelona），博士 

· 欧盟玛丽居里学者

· 福布斯欧洲“30位30岁以下精英”

· IEEE电子器件学会优秀博士生奖

· InfoMat青年科学家

· 国家优秀自费留学生奖学金

· 巴塞罗那大学杰出博士毕业生奖

· Park Systems公司AFM award

Ø Y. Shi, et al., Electronic synapses made of layered two-dimensional materials, Nature Electronics, 1, 458-465 (2018).  

Ø S. Chen, Y. Shi, et al., Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks, Nature Electronics, 3, 638-645 (2020). (Front cover)

Ø Y. Shi*, et al., Superior electrostatic control in uniform monolayer MoS₂ scaled transistors via in-situ surface smoothening, IEDM, pp. 37.1.1-37.1.4 (2021).

Ø Y. Shi, et al., Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses, IEDM, pp. 5.4.1-5.4.4 (2017).

Ø X. Wu, Y. Shi, et al., Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm² channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg, IEDM, pp. 7.4.1-7.4.4 (2021).

Ø Q. Smets, Y. Shi, et al., Sources of variability in scaled MoS₂ FETs, IEDM, pp. 3.1.1-3.1.4 (2020).

Ø C.-H. Wang, Y. Shi, et al., 3D monolithic stacked 1T1R cells using monolayer MoS₂ FET and h-BN RRAM fabricated at low (150 °C) temperature, IEDM, pp. 22.5.1-22.5.4 (2018).

Ø F. Puglisi, Y. Shi, et al., 2D h-BN based RRAM devices, IEDM, pp. 34.8.1-34.8.4 (2016).

Ø Y. Shi, et al., Template for growing a crystal of a two-dimensional material, US patent 18351402, 2024.

Ø Y. Shi, et al., Deposition of highly crystalline 2D Materials, US patent 17677005, 2024.

Ø Y. Shi*, et al., Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics, ACS Nano, 15, 9482-9494 (2021).

Ø I. Kandybka, Y. Shi, et al., Chemical vapor deposition of a single-crystalline MoS₂ monolayer through anisotropic 2D crystal growth on stepped sapphire surface, ACS Nano, 18, 3173-3186 (2024).

Ø Y. Shi, et al., High solar-to-hydrogen conversion efficiency at pH 7 based on a PV-EC cell with an oligomeric molecular anode, ACS Applied Materials & Interface, 12, 55856-55864 (2020).

Ø J. Serron, Y. Shi, et al., Conductivity enhancement in transition metal dichalcogenides: a complex water intercalation and desorption mechanism, ACS Applied Materials & Interfaces, 15, 26175-26189 (2023).

Ø V. Spampinato, Y. Shi, et al., Correlated intrinsic electrical and chemical properties of epitaxial WS2 via combined C-AFM and ToF-SIMS characterization, Advanced Materials Interfaces, 10, 2202016 (2023).

Ø M. A. Hoque, Y. Shi, et al., Water oxidation electrocatalysis using ruthenium coordination oligomers adsorbed on multiwalled carbon nanotubes, Nature Chemistry, 12, 1060-1066 (2020).

Ø C. Wen, Y. Shi, et al., Advanced data encryption using 2D materials, Advanced Materials, 33, 2100185 (2021).

Ø S. Fujii, Y. Shi, et al., Scaling the CBRAM switching layer diameter to 30 nm improves cycling endurance, IEEE Electron Device Letters, 99, 1-4 (2017).

Ø K. Tang, Y. Shi, et al., Distinguishing oxygen vacancy electromigration and conductive filament formation in TiO₂ resistance switching using liquid electrolyte contacts, Nano Letters, 17, 4390-4399 (2017).

Ø X. Jing, Y. Shi, et al., Engineering field effect transistors with 2D semiconducting channels: status and prospects, Advanced Functional Materials, 30, 1901971 (2020).

Ø T. Han, Y. Shi*, et al., Potassium hydroxide mixed with lithium hydroxide: an advanced electrolyte for oxygen evolution reaction, Solar RRL, 3, 1900195 (2019).

Ø Y. Shi, et al., Substitution of native silicon oxide by titanium in Ni-coated silicon photoanodes for water splitting solar cells, Journal of Materials Chemistry A, 5, 1996-2003 (2017). (Front cover)

Ø L. Jiang^#, Y. Shi^#, et al., Dielectric breakdown in chemical vapor deposited hexagonal boron nitride, ACS Applied Materials & Interfaces, 9, 39758-39770 (2017).

Ø Y. Shi, et al., CuO-functionalized silicon photoanodes for photoelectrochemical water splitting devices, ACS Applied Materials & Interfaces, 8, 686-702 (2016).

Ø T. Han^#, Y. Shi^#, et al., Aging mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting, Journal of Materials Chemistry A, 4, 8053-8060 (2016). (Back cover)

Ø Y. Shi, et al., In situ demonstration of the link between mechanical strength and resistive switching in conductive filament based non-volatile memories, Advanced Electronic Materials, 1, 1400058 (2015).

Ø Y. Shi, et al., Ageing mechanisms and reliability of graphene-based electrodes, Nano Research, 7, 1820-1831 (2014). (Front cover)