周选择，中科大特任副研究员，墨子杰出青年，研究方向为超宽禁带氧化镓材料与功率器件。在IEEE EDL、IEEE TED、APL、ISPSD等领域顶级期刊和会议发表文章30余篇。主持国自然青年、科技委、中电科项目等。多项研究工作被科学网、人民网、中国教育网、科技日报、《Compound Semiconductor》国际刊物专题报道。研究成果入选2024年度中国第三代半导体十大进展。

2014.9—2018.6 南昌大学理学院，学士，物理学

2018.9—2023.6 中国科学技术大学微电子学院，硕博，电子科学与技术

2023.7—2025.6 中国科学技术大学微电子学院，博士后

2025.7—至今 中国科学技术大学微电子学院，特任副研究员

lZhou X, Liu Q, Xu G, Zhou K, Xiang X, He Q, Hao W, Jian G, Zhao X, Long S. Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study [J]. IEEE Trans Electron Devices, 2021, 68(4): 1501-1506.

lZhou X, Ma Y, Xu G, Liu Q, Liu J, He Q, Zhao X, Long S. Enhancement-mode β-Ga₂O₃ U-shaped gate trench vertical MOSFET realized by oxygen annealing [J]. Applied Physics Letters, 2022, 121(22): 223501.

lZhou X, Liu Q, Hao W, Xu G, Long S. Normally-off β-Ga₂O₃ Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed Gate [J]. IEEE 26^th Int Symp Power Semiconductor Devices IC’s (ISPSD), 2022.

lZhou X, Xu G, and Long S. Large-area multi-fingers β-Ga₂O₃ MOSFET and its self-heating effect [J]. Journal of Semiconductors, 2023, 40(1): 072804.

lXiong W^#, Zhou X^#, Xu G, He Q, Jian G, Chen C, Yu Y, Hao W, Xiang X, Zhao X, Mu W, Jia Z, Tao X, Long S. Double-Barrier β-Ga₂O₃ Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current [J]. IEEE Electron Device Letters, 2021, 42(3): 430-433.

lMa Y^#, Zhou X^#, Tang W, Zhang X, Xu G, Zhang L, Chen T, Dai S, Bian C, Li B, Zeng Z and Long S. 702.3 A/cm 10.4 mΩcm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation [J]. IEEE Electron Device Lett, 2023, 444(3): 384-387.