周选择博士现任中国科学技术大学微电子学院博士后，研究方向为宽禁带半导体材料和器件。发表文章30余篇，其中以一作/通讯身份发表文章7篇。Google学术引用700余次。研究工作多次被科学网、人民网报道。

• 2014.9—2018.6 南昌大学理学院，学士，物理学

• 2018.9—2023.6 中国科学技术大学微电子学院，硕博，电子科学与技术

  
  

• Zhou X, Liu Q, Xu G, Zhou K, Xiang X, He Q, Hao W, Jian G, Zhao X, Long S. Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study [J]. IEEE Trans Electron Devices, 2021, 68(4): 1501-1506.

• Zhou X, Ma Y, Xu G, Liu Q, Liu J, He Q, Zhao X, Long S. Enhancement-mode β-Ga₂O₃ U-shaped gate trench vertical MOSFET realized by oxygen annealing [J]. Applied Physics Letters, 2022, 121(22): 223501.

• Zhou X, Liu Q, Hao W, Xu G, Long S. Normally-off β-Ga₂O₃ Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed Gate [J]. IEEE 26th Int Symp Power Semiconductor Devices IC’s (ISPSD), 2022.

• Zhou X, Xu G, and Long S. Large-area multi-fingers β-Ga₂O₃ MOSFET and its self-heating effect [J]. Journal of Semiconductors, 2023, 40(1): 072804.

• Xiong W#, Zhou X#, Xu G, He Q, Jian G, Chen C, Yu Y, Hao W, Xiang X, Zhao X, Mu W, Jia Z, Tao X, Long S. Double-Barrier β-Ga₂O₃ Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current [J]. IEEE Electron Device Letters, 2021, 42(3): 430-433.

• Ma Y#, Zhou X#, Tang W, Zhang X, Xu G, Zhang L, Chen T, Dai S, Bian C, Li B, Zeng Z and Long S. 702.3 A/cm 10.4 mΩcm2 β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation [J]. IEEE Electron Device Lett, 2023, 444(3): 384-387.